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yp街机试玩:刘燕丽教授

2024/03/14  点击:[]

一、个人基本信息

     

刘燕丽、女、博士研究生、教授、主要研究方向为III族氮化物半导体材料与电子器件的理论与实验研究、近年来主持国家自然科学基金项目1项,山东省自然科学基金项目1项,主持山东省高等yp街机试玩科技计划项目1项,烟台市重点研发计划项目1项。发表SCI论文近二十篇,其中以第一作者发表SCI论文8篇。

二、科研项目

1.国家自然科学基金项目,61804089,2019/01-2021/12,24万元,项目负责人

2.山东省自然科学基金培养基金项目,ZR2016FP09, 2016/11-2018/06,5万元,项目负责人

3.山东省高等yp街机试玩科技计划项目,J16LN04,2016/12-2019/12,5万元,项目负责人

4.烟台市科技计划项目,2017ZH064,2017/01-2020/12,10万元,项目负责人

三、代表性论文

1.Liu Yanli, Chen Dunjun, Wei Guangfen, Lin Zhonghai, He Aixiang , Li Meihua, Wang Pingjian, Lu Hai, Zhang Rong, Zheng Youdou, Optics Express, Temperature-dependent ultraviolet Raman scattering and anomalous Raman phenomenon of AlGaN/GaN heterostructure, Optics Express, 2019, 27: 4781-4788      

2.刘燕丽,王伟,董燕,陈敦军,张荣,郑有炓,结构参数对N极性面GaN/InAlN高电子迁移率晶体管性能的影响,物理学报,2019. 68: 247203      

3.Liu Yanli, Yang Lianhong, ChenDunjun, Zhang Li, Lu Hai, ZhangRong, Zheng Youdou, The study of near-resonance Raman scattering ofAlInN/AlN/GaN heterostructure,Superlattices and Microstructures, 2015, 83:353-360      

4.Liu Yanli, Chen Dunjun, Xue Junjun, Liu Bin, LuHai, ZhangRong, Zheng Youdou, Xu Ke, Zhang Jinping, Cui Bentao, Wowchak Andrew M, Dabiran Amir M, High-indium-content InGaN quantum-well structure grownpseudomorphically on a strain-relaxed InGaN template layer, Journal of VacuumScience & Technology B, 2012, 30: 030603      

5. Liu, Yanli, Chen, Dunjun, Yang, Lianhong, Lu Hai, Zhang Rong, Zheng Youdou, A method of applying compressive pre-stress to AlGaN barrier inAlGaN/GaN heterostructures by depositing an additional thermally mismatcheddielectric, Physica Status Solidi A-Applications and Materials Science, 2016, 213: 2474-2478      

6. Liu Yanli, Yang Xifeng, Chen Dunjun, Lu Hai, Zhang Rong, ZhengYoudou, Determination of Temperature-Dependent Stress State in Thin AlGaNLayer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering , Advances in Condensed Matter Physics, 2015, 2015: 918428      

7.Liu Yanli, Chen Dunjun, Dong Kexiu, Lu Hai, Zhang Rong, ZhengYoudou, Zhu Zhilin, Wei Guangfen, Lin Zhonghai, Temperature Dependence ofthe Energy Band Diagram of AlGaN/GaN Heterostructure, Advances in CondensedMatter Physics, 2018, 2018: 1-4      

8.Liu Yanli, He Xiao, Dong Yan, Fu Su, Liu Yuhui, Chen Dunjun, The Sensing Mechanism of InAlN/GaN HEMT, Crystals, 2022, 3: 401      

     

     

     

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